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| KSE180/181/182 KSE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications 1 TO-126 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSE180 : KSE181 : KSE182 1. Emitter Value 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 - 65 ~ 150 Units V V V V V V V A A A W W C C VCEO Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : KSE180 : KSE181 : KSE182 Collector Cut-off Current : KSE180 : KSE181 : KSE182 : KSE180 : KSE181 : KSE182 Emitter Cut-off Current DC Current Gain Test Condition IC = 10mA, IB = 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 12 250 Max. Units V V V A A A mA mA mA A ICBO VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150C VCB = 80V, IE = 0 @ TC = 150C VCB = 100V, IE = 0 @ TC = 150C VBE = 7V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA VCE = 1V, IC = 500mA VCE = 10V, IC = 100mA VCB = 10V, IE = 0, f = 0.1MHz 50 IEBO hFE VCE(sat) Collector-Emitter Saturation Voltage 0.3 0.9 1.7 1.5 2.0 1.2 30 V V V V V V MHz pF VBE(sat) VBE(on) fT Cob Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE180/181/182 Typical Characteristics 5 1000 IB=200mA IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN 3 IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA IB = 20mA 100 V CE = 5V 2 V CE=1V 10 1 0 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 10IB f=0.1MHZ IE=0 1 VBE(sat) Cob[pF], CAPACITANCE 0.1 1 100 0.1 VCE(sat) 10 0.01 0.01 1 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 16 ICMAX.(Pulse) 50 0 s 14 0 10 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION IC MAX.(DC) 1 5m s Dis sip atio n s 12 Lim ited 10 8 B S/ d ite m Li 6 0.1 4 KSE180 KSE181 KSE182 VCE MAX. 2 0.01 1 10 100 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE180/181/182 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H2 |
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